RN2101MFV Datasheet. Specs and Replacement

Type Designator: RN2101MFV  📄📄 

SMD Transistor Code: YA.

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 0.9 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT723 VESM

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RN2101MFV datasheet

 ..1. Size:200K  toshiba

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RN2101MFV

RN2101MFV RN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101MFV,RN2102MFV,RN2103MFV RN2104MFV,RN2105MFV,RN2106MFV Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 1.2 0.05 0.80 0.05 Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the ... See More ⇒

 8.1. Size:188K  toshiba

rn2101ct rn2106ct.pdf pdf_icon

RN2101MFV

RN2101CT RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101CT,RN2102CT,RN2103CT RN2104CT,RN2105CT,RN2106CT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 0.5 0.03 Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces p... See More ⇒

 8.2. Size:189K  toshiba

rn2101act rn2106act.pdf pdf_icon

RN2101MFV

RN2101ACT RN2106ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101ACT,RN2102ACT,RN2103ACT RN2104ACT,RN2105ACT,RN2106ACT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 0.6 0.05 0.5 0.03 Extra small package (CST3) is applicable for extra high density fabrication. Inc... See More ⇒

 8.3. Size:167K  toshiba

rn2101fs rn2102fs rn2103fs rn2104fs rn2105fs rn2106fs.pdf pdf_icon

RN2101MFV

RN2101FS RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 0.15 0.05 0.2 0.05 Incorporating a bias resistor into a transistor reduces parts count. 0.35 0.05 0.6 0.05 Red... See More ⇒

Detailed specifications: RN1972FS, RN1973CT, RN1973FS, RN1973HFE, RN1973, RN2101ACT, RN2101CT, RN2101FS, 2SC1815, RN2101, RN2102ACT, RN2102CT, RN2102FS, RN2102MFV, RN2102, RN2103ACT, RN2103CT

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