All Transistors. RN2101MFV Datasheet

 

RN2101MFV Datasheet and Replacement


   Type Designator: RN2101MFV
   SMD Transistor Code: YA.
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 0.9 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT723 VESM
 

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RN2101MFV Datasheet (PDF)

 ..1. Size:200K  toshiba
rn2101mfv rn2102mfv rn2103mfv rn2104mfv rn2105mfv rn2106mfv.pdf pdf_icon

RN2101MFV

RN2101MFVRN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101MFV,RN2102MFV,RN2103MFV RN2104MFV,RN2105MFV,RN2106MFV Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.2 0.050.80 0.05 Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the

 8.1. Size:188K  toshiba
rn2101ct rn2106ct.pdf pdf_icon

RN2101MFV

RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101CT,RN2102CT,RN2103CT RN2104CT,RN2105CT,RN2106CT Switching Applications Unit: mmInverter Circuit Applications 0.60.050.50.03Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces p

 8.2. Size:189K  toshiba
rn2101act rn2106act.pdf pdf_icon

RN2101MFV

RN2101ACT ~ RN2106ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101ACT,RN2102ACT,RN2103ACT RN2104ACT,RN2105ACT,RN2106ACT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 0.60.050.50.03 Extra small package (CST3) is applicable for extra high density fabrication. Inc

 8.3. Size:167K  toshiba
rn2101fs rn2102fs rn2103fs rn2104fs rn2105fs rn2106fs.pdf pdf_icon

RN2101MFV

RN2101FS~RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 0.150.05 0.20.05 Incorporating a bias resistor into a transistor reduces parts count. 0.350.05 0.60.05 Red

Datasheet: RN1972FS , RN1973CT , RN1973FS , RN1973HFE , RN1973 , RN2101ACT , RN2101CT , RN2101FS , 2N2222A , RN2101 , RN2102ACT , RN2102CT , RN2102FS , RN2102MFV , RN2102 , RN2103ACT , RN2103CT .

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