All Transistors. RN2102MFV Datasheet

 

RN2102MFV Datasheet and Replacement


   Type Designator: RN2102MFV
   SMD Transistor Code: YB.
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 0.9 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT723 VESM

 RN2102MFV Transistor Equivalent Substitute - Cross-Reference Search

   

RN2102MFV Datasheet (PDF)

 ..1. Size:200K  toshiba
rn2101mfv rn2102mfv rn2103mfv rn2104mfv rn2105mfv rn2106mfv.pdf pdf_icon

RN2102MFV

RN2101MFV RN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101MFV,RN2102MFV,RN2103MFV RN2104MFV,RN2105MFV,RN2106MFV Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 1.2 0.05 0.80 0.05 Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the ... See More ⇒

 8.1. Size:167K  toshiba
rn2101fs rn2102fs rn2103fs rn2104fs rn2105fs rn2106fs.pdf pdf_icon

RN2102MFV

RN2101FS RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 0.15 0.05 0.2 0.05 Incorporating a bias resistor into a transistor reduces parts count. 0.35 0.05 0.6 0.05 Red... See More ⇒

 8.2. Size:256K  toshiba
rn2101 rn2102 rn2103 rn2104 rn2105 rn2106.pdf pdf_icon

RN2102MFV

RN2101 RN2106 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101,RN2102,RN2103 RN2104,RN2105,RN2106 Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1101 RN1106 Equivalent Circuit and B... See More ⇒

 9.1. Size:188K  toshiba
rn2101ct rn2106ct.pdf pdf_icon

RN2102MFV

RN2101CT RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101CT,RN2102CT,RN2103CT RN2104CT,RN2105CT,RN2106CT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 0.5 0.03 Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces p... See More ⇒

Datasheet: RN2101ACT , RN2101CT , RN2101FS , RN2101MFV , RN2101 , RN2102ACT , RN2102CT , RN2102FS , BC546 , RN2102 , RN2103ACT , RN2103CT , RN2103FS , RN2103MFV , RN2103 , RN2104ACT , RN2104CT .

History: 2SC3753 | 2SC3900 | RN2104CT | 2SC3774-4 | RN2106ACT | RN2103ACT | RN2104MFV

Keywords - RN2102MFV transistor datasheet

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