RN2104ACT Datasheet and Replacement
Type Designator: RN2104ACT
SMD Transistor Code: D3
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.08 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 0.9 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT883 CST3
RN2104ACT Substitution
RN2104ACT Datasheet (PDF)
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RN2101FS~RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 0.150.05 0.20.05 Incorporating a bias resistor into a transistor reduces parts count. 0.350.05 0.60.05 Red
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RN2101RN2106 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101,RN2102,RN2103 RN2104,RN2105,RN2106 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1101~RN1106 Equivalent Circuit and B
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RN2101MFVRN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101MFV,RN2102MFV,RN2103MFV RN2104MFV,RN2105MFV,RN2106MFV Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.2 0.050.80 0.05 Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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