RN2108ACT
Datasheet, Equivalent, Cross Reference Search
Type Designator: RN2108ACT
SMD Transistor Code: C7
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Maximum Collector Power Dissipation (Pc): 0.1
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 0.08
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 0.9
pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT883
CST3
RN2108ACT
Transistor Equivalent Substitute - Cross-Reference Search
RN2108ACT
Datasheet (PDF)
8.1. Size:177K toshiba
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8.2. Size:162K toshiba
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8.3. Size:194K toshiba
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