RN2109 Datasheet and Replacement
Type Designator: RN2109
SMD Transistor Code: YJ
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SOT416 SC75 SSM
RN2109 Substitution
RN2109 Datasheet (PDF)
rn2107 rn2108 rn2109.pdf

RN2107RN2109 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107,RN2108,RN2109 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107~RN1109 Equivalent Circuit and Bias Resister Values T
rn2107fs rn2108fs rn2109fs.pdf

RN2107FS~RN2109FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FS,RN2108FS,RN2109FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equip
rn2107ft-rn2109ft.pdf

RN2107FT~RN2109FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FT, RN2108FT, RN2109FT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces p
rn2107mfv rn2108mfv rn2109mfv.pdf

RN2107MFVRN2109MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107MFV,RN2108MFV,RN2109MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Ultra-small package, suited to very high density mounting 1.20.05 Incorporating a bias resistor into the transistor reduces the number of parts, so 0.80.05enabling the ma
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: KC846AW | NA51W | AUY22-2 | NA32MX | NA22XG | KC859W | NA22ZI
Keywords - RN2109 transistor datasheet
RN2109 cross reference
RN2109 equivalent finder
RN2109 lookup
RN2109 substitution
RN2109 replacement
History: KC846AW | NA51W | AUY22-2 | NA32MX | NA22XG | KC859W | NA22ZI



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
datasheet mosfet | 2sk2586 | 13005 transistor | ecg123a | irfp360 | bc108 equivalent | irfp4568 | mj15004