RN2110FS PDF and Equivalents Search

 

RN2110FS Specs and Replacement


   Type Designator: RN2110FS
   SMD Transistor Code: U9_XK
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: FSM
 

 RN2110FS Substitution

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RN2110FS datasheet

 ..1. Size:114K  toshiba
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RN2110FS

RN2110FS,RN2111FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FS,RN2111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save a... See More ⇒

 7.1. Size:122K  toshiba
rn2110ft-rn2111ft.pdf pdf_icon

RN2110FS

RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.... See More ⇒

 7.2. Size:109K  toshiba
rn2110f-rn2111f.pdf pdf_icon

RN2110FS

RN2110F,RN2111F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110F,RN2111F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1110F, RN1111F Equivalent Circuit Maximum Ratings (Ta = 25 C... See More ⇒

 8.1. Size:102K  toshiba
rn2110-rn2111.pdf pdf_icon

RN2110FS

RN2110,RN2111 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110,RN2111 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1110, RN1111 Equivalent Circuit Maximum Ratings (Ta = 25 C) Cha... See More ⇒

Detailed specifications: RN2109ACT , RN2109CT , RN2109FS , RN2109F , RN2109MFV , RN2109 , RN2110ACT , RN2110CT , MPSA42 , RN2110MFV , RN2110 , RN2111ACT , RN2111CT , RN2111FS , RN2111F , RN2111MFV , RN2111 .

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