RN2110FS
Datasheet, Equivalent, Cross Reference Search
Type Designator: RN2110FS
SMD Transistor Code: U9_XK
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.05
W
Maximum Collector-Base Voltage |Vcb|: 20
V
Maximum Collector-Emitter Voltage |Vce|: 20
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.05
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 1.2
pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: FSM
RN2110FS
Transistor Equivalent Substitute - Cross-Reference Search
RN2110FS
Datasheet (PDF)
..1. Size:114K toshiba
rn2110fs rn2111fs.pdf
RN2110FS,RN2111FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FS,RN2111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save a
7.1. Size:122K toshiba
rn2110ft-rn2111ft.pdf
RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.
7.2. Size:109K toshiba
rn2110f-rn2111f.pdf
RN2110F,RN2111F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110F,RN2111F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1110F, RN1111F Equivalent Circuit Maximum Ratings (Ta = 25C
8.1. Size:102K toshiba
rn2110-rn2111.pdf
RN2110,RN2111 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110,RN2111 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1110, RN1111 Equivalent Circuit Maximum Ratings (Ta = 25C) Cha
8.2. Size:163K toshiba
rn2110mfv rn2111mfv.pdf
RN2110MFV,RN2111MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2110MFV,RN2111MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Ultra-small package, suited to very high density mounting 1.20.05 Incorporating a bias resistor into the transistor reduces the number of parts, so 0
8.3. Size:154K toshiba
rn2110ct rn2111ct.pdf
RN2110CT,RN2111CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110CT,RN2111CT Switching Applications Unit: mmInverter Circuit Applications 0.60.05Interface Circuit Applications 0.50.03Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count en
8.4. Size:152K toshiba
rn2110act rn2111act.pdf
RN2110ACT,RN2111ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110ACT,RN2111ACT Switching Applications Unit: mmInverter Circuit Applications 0.60.05Interface Circuit Applications 0.50.03Driver Circuit Applications Extra small package (CST3) is applicable for extra high density fabrication. Incorpora
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