RN2110 Datasheet. Specs and Replacement

Type Designator: RN2110  📄📄 

SMD Transistor Code: YK

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 4.7 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT416 SC75 SSM

  📄📄 Copy 

 RN2110 Substitution

- BJT ⓘ Cross-Reference Search

 

RN2110 datasheet

 0.1. Size:102K  toshiba

rn2110-rn2111.pdf pdf_icon

RN2110

RN2110,RN2111 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110,RN2111 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1110, RN1111 Equivalent Circuit Maximum Ratings (Ta = 25 C) Cha... See More ⇒

 0.2. Size:163K  toshiba

rn2110mfv rn2111mfv.pdf pdf_icon

RN2110

RN2110MFV,RN2111MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2110MFV,RN2111MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Ultra-small package, suited to very high density mounting 1.2 0.05 Incorporating a bias resistor into the transistor reduces the number of parts, so 0... See More ⇒

 0.3. Size:114K  toshiba

rn2110fs rn2111fs.pdf pdf_icon

RN2110

RN2110FS,RN2111FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FS,RN2111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save a... See More ⇒

 0.4. Size:122K  toshiba

rn2110ft-rn2111ft.pdf pdf_icon

RN2110

RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.... See More ⇒

Detailed specifications: RN2109FS, RN2109F, RN2109MFV, RN2109, RN2110ACT, RN2110CT, RN2110FS, RN2110MFV, 431, RN2111ACT, RN2111CT, RN2111FS, RN2111F, RN2111MFV, RN2111, RN2112ACT, RN2112CT

Keywords - RN2110 pdf specs

 RN2110 cross reference

 RN2110 equivalent finder

 RN2110 pdf lookup

 RN2110 substitution

 RN2110 replacement