All Transistors. RN2111FS Datasheet

 

RN2111FS Datasheet and Replacement


   Type Designator: RN2111FS
   SMD Transistor Code: UF_XM
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: FSM

 RN2111FS Transistor Equivalent Substitute - Cross-Reference Search

   

RN2111FS Datasheet (PDF)

 ..1. Size:114K  toshiba
rn2110fs rn2111fs.pdf pdf_icon

RN2111FS

RN2110FS,RN2111FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FS,RN2111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save a... See More ⇒

 7.1. Size:122K  toshiba
rn2110ft-rn2111ft.pdf pdf_icon

RN2111FS

RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.... See More ⇒

 7.2. Size:109K  toshiba
rn2110f-rn2111f.pdf pdf_icon

RN2111FS

RN2110F,RN2111F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110F,RN2111F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1110F, RN1111F Equivalent Circuit Maximum Ratings (Ta = 25 C... See More ⇒

 8.1. Size:102K  toshiba
rn2110-rn2111.pdf pdf_icon

RN2111FS

RN2110,RN2111 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110,RN2111 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1110, RN1111 Equivalent Circuit Maximum Ratings (Ta = 25 C) Cha... See More ⇒

Datasheet: RN2109 , RN2110ACT , RN2110CT , RN2110FS , RN2110MFV , RN2110 , RN2111ACT , RN2111CT , MJE350 , RN2111F , RN2111MFV , RN2111 , RN2112ACT , RN2112CT , RN2112FS , RN2112MFV , RN2112 .

History: RN2108MFV | RN1973 | 2SC3510 | RN2110ACT | K2108A | GT762 | RN2108CT

Keywords - RN2111FS transistor datasheet

 RN2111FS cross reference
 RN2111FS equivalent finder
 RN2111FS lookup
 RN2111FS substitution
 RN2111FS replacement

 

 
Back to Top

 


 
.