RN2112FS Datasheet. Specs and Replacement
Type Designator: RN2112FS 📄📄
SMD Transistor Code: UH_XN_YN
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Package: FSM
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RN2112FS datasheet
RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2112FS, RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowe... See More ⇒
RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1112F, RN1113F Equivalent Circuit Absolute Maximum Ratings (... See More ⇒
RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.... See More ⇒
RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm 1.2 0.05 Ultra-small package, suited to very high density mounting 0.8 0.05 Incorporating a bias resistor into the transistor reduces the number of ... See More ⇒
Detailed specifications: RN2111ACT, RN2111CT, RN2111FS, RN2111F, RN2111MFV, RN2111, RN2112ACT, RN2112CT, D667, RN2112MFV, RN2112, RN2113ACT, RN2113CT, RN2113FS, RN2113F, RN2113MFV, RN2113
Keywords - RN2112FS pdf specs
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BJT Parameters and How They Relate
History: RN2901 | MUN2230T1G | RN2311 | 2N6116 | MT0491 | BDX34C | RN2907FS
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