2N1173 Specs and Replacement
Type Designator: 2N1173
Material of Transistor: Ge
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 35 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO29
2N1173 Substitution
- BJT ⓘ Cross-Reference Search
2N1173 datasheet
Detailed specifications: 2N1167, 2N1167A, 2N1168, 2N1169, 2N117, 2N1170, 2N1171, 2N1172, BC548, 2N1174, 2N1175, 2N1175A, 2N1175B, 2N1176, 2N1176A, 2N1176B, 2N1177
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