RN2113CT Datasheet. Specs and Replacement
Type Designator: RN2113CT 📄📄
SMD Transistor Code: UJ
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 300
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RN2113CT datasheet
RN2112CT,RN2113CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2112CT,RN2113CT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 Interface Circuit Applications 0.5 0.03 Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enab... See More ⇒
RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1112F, RN1113F Equivalent Circuit Absolute Maximum Ratings (... See More ⇒
RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2112FS, RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowe... See More ⇒
RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm 1.2 0.05 Ultra-small package, suited to very high density mounting 0.8 0.05 Incorporating a bias resistor into the transistor reduces the number of ... See More ⇒
Detailed specifications: RN2111MFV, RN2111, RN2112ACT, RN2112CT, RN2112FS, RN2112MFV, RN2112, RN2113ACT, BC547, RN2113FS, RN2113F, RN2113MFV, RN2113, RN2114MFV, RN2114, RN2115F, RN2115MFV
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BJT Parameters and How They Relate
History: MUN2230T1G | MT0491 | RN2901 | RN2311 | BDX34C | RN2907FS | 2N6116
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