RN2113MFV Datasheet. Specs and Replacement

Type Designator: RN2113MFV  📄📄 

SMD Transistor Code: YP.

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 47 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 0.9 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT723 VESM

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RN2113MFV datasheet

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RN2113MFV

RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm 1.2 0.05 Ultra-small package, suited to very high density mounting 0.8 0.05 Incorporating a bias resistor into the transistor reduces the number of ... See More ⇒

 8.1. Size:276K  toshiba

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RN2113MFV

RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1112F, RN1113F Equivalent Circuit Absolute Maximum Ratings (... See More ⇒

 8.2. Size:94K  toshiba

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RN2113MFV

RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2112FS, RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowe... See More ⇒

 8.3. Size:124K  toshiba

rn2112ft-rn2113ft.pdf pdf_icon

RN2113MFV

RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.... See More ⇒

Detailed specifications: RN2112CT, RN2112FS, RN2112MFV, RN2112, RN2113ACT, RN2113CT, RN2113FS, RN2113F, BD139, RN2113, RN2114MFV, RN2114, RN2115F, RN2115MFV, RN2115, RN2116FT, RN2116F

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