RN2118
Datasheet, Equivalent, Cross Reference Search
Type Designator: RN2118
SMD Transistor Code: YW
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 4.7
Maximum Collector Power Dissipation (Pc): 0.1
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 25
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Collector Capacitance (Cc): 3
pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT416
SC75
SSM
RN2118
Transistor Equivalent Substitute - Cross-Reference Search
RN2118
Datasheet (PDF)
..1. Size:161K toshiba
rn2114 rn2118.pdf
RN2114RN2118 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114, RN2115, RN2116, RN2117, RN2118 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Simplified circuit design Fewer parts and simplified manufacturing process Complementary to RN1107 ~ RN1109 Equivalent Circuit and Bias Resistor V
0.1. Size:175K toshiba
rn2114ft rn2118ft.pdf
RN2114FTRN2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Enabling simplified circuit design Enabling reduction in the quantity of parts and manufacturing process Complementary to the RN1114FT
0.2. Size:179K toshiba
rn2114f rn2118f.pdf
RN2114FRN2118F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114F,RN2115F,RN2116F,RN2117F,RN2118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1114F~RN1118F Equivalent Circuit and B
0.3. Size:200K toshiba
rn2114mfv rn2115mfv rn2116mfv rn2117mfv rn2118mfv.pdf
RN2114MFVRN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114MFV,RN2115MFV,RN2116MFV RN2117MFV,RN2118MFV Unit: mmSwitching Applications Inverter Circuit Applications 1.20.05 0.80.05 Interface Circuit Applications Driver Circuit Applications 1 Ultra-small package, suited to very high density mounting 2 3 Incorporating a bias resis
Datasheet: 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.