RN2301 Datasheet. Specs and Replacement

Type Designator: RN2301  📄📄 

SMD Transistor Code: YA

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT323 SC70 USM

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RN2301 datasheet

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RN2301

RN2301 RN2306 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2301,RN2302,RN2303 RN2304,RN2305,RN2306 Unit mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1301to1306 Equivalent Circuit Bias Resi... See More ⇒

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RN2301

RN2307 RN2309 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2307,RN2308,RN2309 Unit mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1307 RN1309 Equivalent Circuit Bias Resistor Values Type No.... See More ⇒

Detailed specifications: RN2118FT, RN2118F, RN2118MFV, RN2118, RN2119MFV, RN2130MFV, RN2131MFV, RN2132MFV, 2N3906, RN2302, RN2303, RN2304, RN2305, RN2306, RN2307, RN2308, RN2309

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