RN2307 Datasheet. Specs and Replacement

Type Designator: RN2307  📄📄 

SMD Transistor Code: YH

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT323 SC70 USM

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RN2307 datasheet

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RN2307

RN2307 RN2309 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2307,RN2308,RN2309 Unit mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1307 RN1309 Equivalent Circuit Bias Resistor Values Type No.... See More ⇒

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RN2307

RN2301 RN2306 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2301,RN2302,RN2303 RN2304,RN2305,RN2306 Unit mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1301to1306 Equivalent Circuit Bias Resi... See More ⇒

Detailed specifications: RN2131MFV, RN2132MFV, RN2301, RN2302, RN2303, RN2304, RN2305, RN2306, 2SD1047, RN2308, RN2309, RN2310, RN2311, RN2312, RN2313, RN2314, RN2315

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