RN2310 Datasheet, Equivalent, Cross Reference Search
Type Designator: RN2310
SMD Transistor Code: YK
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT323 SC70 USM
RN2310 Transistor Equivalent Substitute - Cross-Reference Search
RN2310 Datasheet (PDF)
rn2310-rn2311.pdf
RN2310,RN2311 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2310,RN2311 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1310, RN1311 Equivalent Circuit Maximum Ratings (Ta = 25C) JEDE
rn2312-rn2313.pdf
RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2312,RN2313 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1312, RN1313 Equivalent Circuit Maximum Ratings (Ta = 25C)
rn2314 rn2315 rn2316 rn2317 rn2318.pdf
RN2314~RN2318 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2314,RN2315,RN2316,RN2317,RN2318 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1314~RN1318 Equivalent Circuit and Bias Resistor
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
