2N5744 Datasheet. Specs and Replacement
Type Designator: 2N5744 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO66
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2N5744 datasheet
..1. Size:125K jmnic
2n5743 2n5744.pdf 
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5743 2N5744 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Fast switching speed APPLICATIONS For general purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbo l Absolute ma... See More ⇒
..2. Size:191K inchange semiconductor
2n5744.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N5744 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA... See More ⇒
..3. Size:125K inchange semiconductor
2n5743 2n5744.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5743 2N5744 DESCRIPTION With TO-66 package Low collector saturation voltage Fast switching speed APPLICATIONS For general purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector l Absolute ... See More ⇒
9.3. Size:11K semelab
2n5743.pdf
2N5743 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 60V IC = 20A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci... See More ⇒
9.4. Size:11K semelab
2n5741.pdf
2N5741 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒
9.5. Size:164K jmnic
2n5745.pdf
JMnic Product Specification Silicon PNP Power Transistors 2N4398 2N4399 2N5745 DESCRIPTION With TO-3 package Complement to type 2N5301/5302/5303 Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and... See More ⇒
9.6. Size:104K jmnic
2n5741 2n5742.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5741 2N5742 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage Fast switching speed APPLICATIONS For general purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximu... See More ⇒
9.7. Size:117K inchange semiconductor
2n5741 2n5742.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5741 2N5742 DESCRIPTION With TO-3 package Low collector saturation voltage Fast switching speed APPLICATIONS For general purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximu... See More ⇒
9.8. Size:184K inchange semiconductor
2n5743.pdf
isc Silicon PNP Power Transistor 2N5743 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒
9.9. Size:121K inchange semiconductor
2n4398 2n4399 2n5745.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4398 2N4399 2N5745 DESCRIPTION With TO-3 package Complement to type 2N5301/5302/5303 Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified o... See More ⇒
9.10. Size:51K inchange semiconductor
2n5740.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5740 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min.) Low Collector Saturation Voltage- VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RA... See More ⇒
Detailed specifications: 2N5737, 2N5738, 2N5739, 2N574, 2N5740, 2N5741, 2N5742, 2N5743, BD335, 2N5745, 2N574A, 2N575, 2N5758, 2N5759, 2N575A, 2N576, 2N5760
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