RN2325A Datasheet, Equivalent, Cross Reference Search
Type Designator: RN2325A
SMD Transistor Code: RE
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 0.47 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Maximum Collector Power Dissipation (Pc): 0.1
W
Maximum Collector-Base Voltage |Vcb|: 15
V
Maximum Collector-Emitter Voltage |Vce|: 12
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Collector Capacitance (Cc): 5
pF
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: SOT323
SC70
USM
RN2325A Transistor Equivalent Substitute - Cross-Reference Search
RN2325A Datasheet (PDF)
rn2321a rn2327a.pdf
RN2321ARN2327A TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2321A,RN2322A,RN2323A,RN2324A RN2325A,RN2326A,RN2327A Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current driving is possible. Since bias resisters are built in the transistor, the miniaturization of the apparatus by curtailment of the number
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .