RN2326A Datasheet. Specs and Replacement

Type Designator: RN2326A  📄📄 

SMD Transistor Code: RF

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 1 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: SOT323 SC70 USM

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RN2326A datasheet

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RN2326A

RN2321A RN2327A TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2321A,RN2322A,RN2323A,RN2324A RN2325A,RN2326A,RN2327A Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current driving is possible. Since bias resisters are built in the transistor, the miniaturization of the apparatus by curtailment of the number ... See More ⇒

Detailed specifications: RN2316, RN2317, RN2318, RN2321A, RN2322A, RN2323A, RN2324A, RN2325A, BC558, RN2327A, RN2401, RN2402, RN2403, RN2404, RN2405, RN2406, RN2407

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