RN2412 Datasheet, Equivalent, Cross Reference Search
Type Designator: RN2412
SMD Transistor Code: XN_YN
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT346 SC59 SMINI
RN2412 Transistor Equivalent Substitute - Cross-Reference Search
RN2412 Datasheet (PDF)
rn2412-rn2413.pdf
RN2412,RN2413 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2412,RN2413 Switching, Inverter Circuit, Interface Circuit Unit in mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1412, RN1413 Equivalent Circuit Maximum Ratings (Ta = 25C) Ch
rn2414-rn2418.pdf
RN2414~RN2418 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2414,RN2415,RN2416,RN2417,RN2418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1414~RN1418 Equivalent Circuit and Bias Resistor
rn2410-rn2411.pdf
RN2410,RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2410,RN2411 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1410, RN1411 Equivalent Circuit Maximum Ratings (Ta = 25C)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: RN2907FS
