RN2427 Datasheet and Replacement
Type Designator: RN2427
SMD Transistor Code: RG
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.22
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SOT346 SC59 SMINI
RN2427 Substitution
RN2427 Datasheet (PDF)
rn2421-rn2427.pdf

RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421,RN2422,RN2423,RN2424 RN2425,RN2426,RN2427 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications High current type (IC(MAX) = -800mA) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Low V CE (
Datasheet: RN2417 , RN2418 , RN2421 , RN2422 , RN2423 , RN2424 , RN2425 , RN2426 , 2222A , RN2501 , RN2502 , RN2503 , RN2504 , RN2505 , RN2506 , RN2507 , RN2508 .
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