RN2427 Datasheet, Equivalent, Cross Reference Search
Type Designator: RN2427
SMD Transistor Code: RG
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.22
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.8
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Collector Capacitance (Cc): 13
pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SOT346
SC59
SMINI
RN2427 Transistor Equivalent Substitute - Cross-Reference Search
RN2427 Datasheet (PDF)
rn2421-rn2427.pdf
RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421,RN2422,RN2423,RN2424 RN2425,RN2426,RN2427 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications High current type (IC(MAX) = -800mA) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Low V CE (
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: RCP115
