RN2501 Datasheet. Specs and Replacement
Type Designator: RN2501 📄📄
SMD Transistor Code: YA
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 30
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RN2501 datasheet
RN2501 RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2501,RN2502,RN2503 RN2504,RN2505,RN2506 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process ... See More ⇒
RN2507 RN2509 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2507,RN2508,RN2509 Switching, Inverter Circuit, Interface Circuit Unit in mm And Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to ... See More ⇒
Detailed specifications: RN2418, RN2421, RN2422, RN2423, RN2424, RN2425, RN2426, RN2427, 2SC2240, RN2502, RN2503, RN2504, RN2505, RN2506, RN2507, RN2508, RN2509
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BJT Parameters and How They Relate
History: 2SA1576ART1 | KRC121M | KRC112S | NB212HG | BD249C | RN2502 | 2N3815
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