RN2501 Datasheet, Equivalent, Cross Reference Search
Type Designator: RN2501
SMD Transistor Code: YA
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Collector Capacitance (Cc): 3
pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT25
SC74A
SMV
RN2501 Transistor Equivalent Substitute - Cross-Reference Search
RN2501 Datasheet (PDF)
rn2501-rn2506.pdf
RN2501~RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2501,RN2502,RN2503 RN2504,RN2505,RN2506 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
rn2507-rn2509.pdf
RN2507~RN2509 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2507,RN2508,RN2509 Switching, Inverter Circuit, Interface Circuit Unit in mmAnd Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: QST8
