2N5758 Datasheet. Specs and Replacement

Type Designator: 2N5758  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Collector Capacitance (Cc): 300 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO3

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2N5758 datasheet

 ..1. Size:12K  semelab

 2n5758.pdf pdf_icon

2N5758

2N5758 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 6A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒

 ..2. Size:129K  jmnic

 2n5758 2n5759 2n5760.pdf pdf_icon

2N5758

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ... See More ⇒

 ..3. Size:118K  inchange semiconductor

 2n5758 2n5759 2n5760.pdf pdf_icon

2N5758

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outlin... See More ⇒

 0.1. Size:183K  motorola

 2n5758re.pdf pdf_icon

2N5758

Order this document MOTOROLA by 2N5758/D SEMICONDUCTOR TECHNICAL DATA 2N5745 (See 2N4398) 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE . . . designed for use in high power audio amplifier applications and high voltage POWER TRANSISTOR switching regulator circuits. NPN SILICON High Collector Emitter Sustaining Voltage 100 140 VOLTS VCEO(sus) = 100 Vdc (... See More ⇒

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Detailed specifications: 2N5740, 2N5741, 2N5742, 2N5743, 2N5744, 2N5745, 2N574A, 2N575, BC546, 2N5759, 2N575A, 2N576, 2N5760, 2N5761, 2N5762, 2N5763, 2N5764

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