RN2605 Datasheet, Equivalent, Cross Reference Search
Type Designator: RN2605
SMD Transistor Code: YE
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Collector Capacitance (Cc): 3
pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT26
SC74
SM6
RN2605 Transistor Equivalent Substitute - Cross-Reference Search
RN2605 Datasheet (PDF)
rn2601-rn2606.pdf
RN2601~RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2601,RN2602,RN2603 RN2604,RN2605,RN2606 Switching, Inverter Circuit, Interface Circuit Unit in mmAnd Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing proces
rn2607-rn2609.pdf
RN2607~RN2609 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2607,RN2608,RN2609 Switching, Inverter Circuit, Interface Circuit Unit in mmAnd Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
