RN2611 Datasheet, Equivalent, Cross Reference Search
Type Designator: RN2611
SMD Transistor Code: YM
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT26 SC74 SM6
RN2611 Transistor Equivalent Substitute - Cross-Reference Search
RN2611 Datasheet (PDF)
..1. Size:115K toshiba
rn2610 rn2611.pdf
rn2610 rn2611.pdf
RN2610,RN2611 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2610,RN2611 Switching, Inverter Circuit, Interface Circuit Unit in mmAnd Driver Circuit Applications Including twodevices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1610~R
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
