RN2611 Datasheet. Specs and Replacement

Type Designator: RN2611  📄📄 

SMD Transistor Code: YM

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT26 SC74 SM6

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RN2611 datasheet

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RN2611

RN2610,RN2611 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2610,RN2611 Switching, Inverter Circuit, Interface Circuit Unit in mm And Driver Circuit Applications Including twodevices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1610 R... See More ⇒

Detailed specifications: RN2602, RN2603, RN2604, RN2605, RN2606, RN2607, RN2608, RN2610, D667, RN2701JE, RN2701, RN2702JE, RN2702, RN2703JE, RN2703, RN2704JE, RN2704

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