All Transistors. RN2706 Datasheet

 

RN2706 Datasheet, Equivalent, Cross Reference Search

Type Designator: RN2706

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT353_SC88A_USV

RN2706 Transistor Equivalent Substitute - Cross-Reference Search

 

RN2706 Datasheet (PDF)

1.1. rn2701je-rn2706je.pdf Size:316K _toshiba

RN2706
RN2706

RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. Incorporating a bias resistor into a transistor red

1.2. rn2701-rn2706.pdf Size:138K _toshiba

RN2706
RN2706

RN2701~RN2706 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2701,RN2702,RN2703,RN2704,RN2705,RN2706 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

5.1. rn2707-rn2709.pdf Size:140K _toshiba

RN2706
RN2706

RN2707~RN2709 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2707,RN2708,RN2709 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to

5.2. rn2707je-rn2709je.pdf Size:200K _toshiba

RN2706
RN2706

RN2707JE~RN2709JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2707JE,RN2708JE,RN2709JE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing

Datasheet: RN2702 , RN2703JE , RN2703 , RN2704JE , RN2704 , RN2705JE , RN2705 , RN2706JE , BC557 , RN2707JE , RN2707 , RN2708JE , RN2708 , RN2709JE , RN2709 , RN2710JE , RN2710 .

 


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