All Transistors. RN2709JE Datasheet

 

RN2709JE Datasheet, Equivalent, Cross Reference Search


   Type Designator: RN2709JE
   SMD Transistor Code: YJ
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 2.1
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT553 ESV

 RN2709JE Transistor Equivalent Substitute - Cross-Reference Search

   

RN2709JE Datasheet (PDF)

 0.1. Size:200K  toshiba
rn2707je-rn2709je.pdf

RN2709JE
RN2709JE

RN2707JE~RN2709JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2707JE,RN2708JE,RN2709JE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Re

 8.1. Size:140K  toshiba
rn2707-rn2709.pdf

RN2709JE
RN2709JE

RN2707~RN2709 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2707,RN2708,RN2709 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary

 9.1. Size:138K  toshiba
rn2701-rn2706.pdf

RN2709JE
RN2709JE

RN2701~RN2706 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2701,RN2702,RN2703,RN2704,RN2705,RN2706 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing proc

 9.2. Size:316K  toshiba
rn2701je-rn2706je.pdf

RN2709JE
RN2709JE

RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. Incorporating a bias resistor into a transis

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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