All Transistors. RN2711 Datasheet

 

RN2711 Datasheet, Equivalent, Cross Reference Search

Type Designator: RN2711

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT353_SC88A_USV

RN2711 Transistor Equivalent Substitute - Cross-Reference Search

 

RN2711 Datasheet (PDF)

1.1. rn2710 rn2711.pdf Size:108K _toshiba

RN2711
RN2711

RN2710,RN2711 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2710,RN2711 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1710

1.2. rn2710je rn2711je.pdf Size:169K _toshiba

RN2711
RN2711

RN2710JE, RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the

5.1. rn2712je rn2713je 071101.pdf Size:255K _toshiba

RN2711
RN2711

RN2712JE,RN2713JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2712JE, RN2713JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture o

5.2. rn2714 100514.pdf Size:231K _toshiba

RN2711
RN2711

RN2714 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2714 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Two devices incorporated in a USV (5-pin ultra-super-mini-type) Built-in bias resistors Simplified circuit design Reduced quantity of parts and manufacturing process Equivalen

Datasheet: RN2707 , RN2708JE , RN2708 , RN2709JE , RN2709 , RN2710JE , RN2710 , RN2711JE , S8550 , RN2712JE , RN2713JE , RN2714 , RN2901AFS , RN2901FE , RN2901FS , RN2901 , RN2902AFS .

 


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