RN2712JE Datasheet. Specs and Replacement
Type Designator: RN2712JE 📄📄
SMD Transistor Code: YN
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 120
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RN2712JE datasheet
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RN2710,RN2711 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2710,RN2711 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1... See More ⇒
RN2710JE, RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Red... See More ⇒
RN2714 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2714 Unit mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Two devices incorporated in a USV (5-pin ultra-super-mini-type) Built-in bias resistors Simplified circuit design Reduced quantity of parts and manufacturing process Equiva... See More ⇒
Detailed specifications: RN2708JE, RN2708, RN2709JE, RN2709, RN2710JE, RN2710, RN2711JE, RN2711, 13007, RN2713JE, RN2714, RN2901AFS, RN2901FE, RN2901FS, RN2901, RN2902AFS, RN2902FE
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