All Transistors. RN2712JE Datasheet

 

RN2712JE Datasheet and Replacement


   Type Designator: RN2712JE
   SMD Transistor Code: YN
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 22 kOhm
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT553 ESV

 RN2712JE Transistor Equivalent Substitute - Cross-Reference Search

   

RN2712JE Datasheet (PDF)

 ..1. Size:255K  toshiba
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RN2712JE

RN2712JE,RN2713JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2712JE, RN2713JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufactur... See More ⇒

 9.1. Size:108K  toshiba
rn2710 rn2711.pdf pdf_icon

RN2712JE

RN2710,RN2711 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2710,RN2711 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1... See More ⇒

 9.2. Size:169K  toshiba
rn2710je rn2711je.pdf pdf_icon

RN2712JE

RN2710JE, RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Red... See More ⇒

 9.3. Size:231K  toshiba
rn2714 100514.pdf pdf_icon

RN2712JE

RN2714 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2714 Unit mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Two devices incorporated in a USV (5-pin ultra-super-mini-type) Built-in bias resistors Simplified circuit design Reduced quantity of parts and manufacturing process Equiva... See More ⇒

Datasheet: RN2708JE , RN2708 , RN2709JE , RN2709 , RN2710JE , RN2710 , RN2711JE , RN2711 , 13007 , RN2713JE , RN2714 , RN2901AFS , RN2901FE , RN2901FS , RN2901 , RN2902AFS , RN2902FE .

History: BUX17A | CD5916 | CD93 | RN2302 | RN2707 | 2SD1407 | 40280

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