All Transistors. RN2901AFS Datasheet

 

RN2901AFS Datasheet, Equivalent, Cross Reference Search


   Type Designator: RN2901AFS
   SMD Transistor Code: D0
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.08 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 0.9 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT963 FS6

 RN2901AFS Transistor Equivalent Substitute - Cross-Reference Search

   

RN2901AFS Datasheet (PDF)

 ..1. Size:171K  toshiba
rn2901afs rn2906afs.pdf

RN2901AFS
RN2901AFS

RN2901AFS~RN2906AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Transistor with Built-in Bias Resistor) RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN2906AFS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-p

 8.1. Size:170K  toshiba
rn2901fs rn2906fs.pdf

RN2901AFS
RN2901AFS

RN2901FS~RN2906FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2901FS,RN2902FS,RN2903FS RN2904FS,RN2905FS,RN2906FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) package. 1

 8.2. Size:554K  toshiba
rn2901fe rn2906fe.pdf

RN2901AFS
RN2901AFS

RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2901FE,RN2902FE,RN2903FE RN2904FE,RN2905FE,RN2906FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a trans

 8.3. Size:575K  toshiba
rn2901 rn2906.pdf

RN2901AFS
RN2901AFS

RN2901~RN2906 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2901,RN2902,RN2903,RN2904,RN2905,RN2906 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a qua

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: UNR921TJ | UN6114 | RN2422

 

 
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