2N5764 Datasheet. Specs and Replacement
Type Designator: 2N5764 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.75 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO128
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2N5764 datasheet
Discrete POWER & Signal Technologies 2N5769 C TO-92 B E NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V V Collector-Base Voltage ... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outlin... See More ⇒
Detailed specifications: 2N5758, 2N5759, 2N575A, 2N576, 2N5760, 2N5761, 2N5762, 2N5763, 2SD2499, 2N5765, 2N5766, 2N5767, 2N5768, 2N5769, 2N576A, 2N5770, 2N5771
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