RN2911AFS Datasheet and Replacement
Type Designator: RN2911AFS
SMD Transistor Code: DF
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.08 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 0.9 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT963 FS6
RN2911AFS Transistor Equivalent Substitute - Cross-Reference Search
RN2911AFS Datasheet (PDF)
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RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reduc... See More ⇒
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RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2910FS, RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm 1.0 0.05 0.8 0.05 0.1 0.05 Two devices are incorporated into a fine pitch small mold (6-pin) 0.1 0.05 package. Incorporating a bias resistor into a ... See More ⇒
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Datasheet: RN2909AFS , RN2909FE , RN2909FS , RN2909 , RN2910AFS , RN2910FE , RN2910FS , RN2910 , 2SB817 , RN2911FE , RN2911FS , RN2911 , RN2912AFS , RN2912FS , RN2913AFS , RN2913FS , RN2961CT .
History: D42C3 | L2SC5635LT1G | UN9215R | MRF653S | L2SA1576ART1G | T1892 | MUN2230LT1
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History: D42C3 | L2SC5635LT1G | UN9215R | MRF653S | L2SA1576ART1G | T1892 | MUN2230LT1
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