All Transistors. RN2911AFS Datasheet

 

RN2911AFS Datasheet and Replacement


   Type Designator: RN2911AFS
   SMD Transistor Code: DF
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.08 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 0.9 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT963 FS6

 RN2911AFS Transistor Equivalent Substitute - Cross-Reference Search

   

RN2911AFS Datasheet (PDF)

 ..1. Size:132K  toshiba
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RN2911AFS

RN2910AFS, RN2911AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2910AFS, RN2911AFS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 1.0 0.05 0.8 0.05 0.1 0.05 0.1 0.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. Incorporating a bias res... See More ⇒

 8.1. Size:167K  toshiba
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RN2911AFS

RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reduc... See More ⇒

 8.2. Size:117K  toshiba
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RN2911AFS

RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2910FS, RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm 1.0 0.05 0.8 0.05 0.1 0.05 Two devices are incorporated into a fine pitch small mold (6-pin) 0.1 0.05 package. Incorporating a bias resistor into a ... See More ⇒

 8.3. Size:114K  toshiba
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RN2911AFS

RN2910,RN2911 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2910,RN2911 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1... See More ⇒

Datasheet: RN2909AFS , RN2909FE , RN2909FS , RN2909 , RN2910AFS , RN2910FE , RN2910FS , RN2910 , 2SB817 , RN2911FE , RN2911FS , RN2911 , RN2912AFS , RN2912FS , RN2913AFS , RN2913FS , RN2961CT .

History: D42C3 | L2SC5635LT1G | UN9215R | MRF653S | L2SA1576ART1G | T1892 | MUN2230LT1

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