All Transistors. RN2911AFS Datasheet

 

RN2911AFS Datasheet and Replacement


   Type Designator: RN2911AFS
   SMD Transistor Code: DF
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.08 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 0.9 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT963 FS6
 

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RN2911AFS Datasheet (PDF)

 ..1. Size:132K  toshiba
rn2910afs rn2911afs.pdf pdf_icon

RN2911AFS

RN2910AFS, RN2911AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2910AFS, RN2911AFS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. Incorporating a bias res

 8.1. Size:167K  toshiba
rn2910fe rn2911fe.pdf pdf_icon

RN2911AFS

RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reduc

 8.2. Size:117K  toshiba
rn2910fs rn2911fs.pdf pdf_icon

RN2911AFS

RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2910FS, RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm1.00.050.80.05 0.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) 0.10.05package. Incorporating a bias resistor into a

 8.3. Size:114K  toshiba
rn2910-rn2911.pdf pdf_icon

RN2911AFS

RN2910,RN2911 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2910,RN2911 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1

Datasheet: RN2909AFS , RN2909FE , RN2909FS , RN2909 , RN2910AFS , RN2910FE , RN2910FS , RN2910 , 2N4401 , RN2911FE , RN2911FS , RN2911 , RN2912AFS , RN2912FS , RN2913AFS , RN2913FS , RN2961CT .

History: LMUN5132DW1T1G | 2SD22 | MP4250A | BF385 | SS8550-MS | 2SC3984 | 2SC444

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