2N5765 Datasheet and Replacement
Type Designator: 2N5765
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 19 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO128
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2N5765 Datasheet (PDF)
2n5769.pdf

Discrete POWER & SignalTechnologies2N5769C TO-92BENPN Switching TransistorThis device is designed for high speed saturated switchingapplications at currents to 100 mA. Sourced from Process 21.See PN2369A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VV Collector-Base Voltage
2n5758 2n5759 2n5760.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol
2n5758 2n5759 2n5760.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SD2134 | BCW61A | BFT60 | NSS1C301E | MPQ4355 | 2SC5345UF | NPS3906R
Keywords - 2N5765 transistor datasheet
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History: 2SD2134 | BCW61A | BFT60 | NSS1C301E | MPQ4355 | 2SC5345UF | NPS3906R



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