All Transistors. RN2913AFS Datasheet

 

RN2913AFS Datasheet, Equivalent, Cross Reference Search

Type Designator: RN2913AFS

SMD Transistor Code: DJ

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.05 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.08 A

Max. Operating Junction Temperature (Tj): 150 °C

Collector Capacitance (Cc): 0.9 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT963_fS6

RN2913AFS Transistor Equivalent Substitute - Cross-Reference Search

 

RN2913AFS Datasheet (PDF)

1.1. rn2912afs rn2913afs 071101.pdf Size:132K _toshiba

RN2913AFS
RN2913AFS

RN2912AFS, RN2913AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2912AFS, RN2913AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.00.05 0.80.05 0.10.05 0.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorporating a bias resistor i

4.1. rn2912fs rn2913fs 071101.pdf Size:117K _toshiba

RN2913AFS
RN2913AFS

RN2912FS,RN2913FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2912FS, RN2913FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.00.05 0.80.05 0.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) 0.10.05 package. Incorporating a bias resistor into a transistor

5.1. rn2910afs rn2911afs 071101.pdf Size:132K _toshiba

RN2913AFS
RN2913AFS

RN2910AFS, RN2911AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2910AFS, RN2911AFS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications 1.00.05 0.80.05 0.10.05 0.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. Incorporating a bias resistor into

5.2. rn2910fs rn2911fs 071101.pdf Size:117K _toshiba

RN2913AFS
RN2913AFS

RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2910FS, RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.00.05 0.80.05 0.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) 0.10.05 package. Incorporating a bias resistor into a transistor

5.3. rn2910fe rn2911fe.pdf Size:167K _toshiba

RN2913AFS
RN2913AFS

RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the p

5.4. rn2910-rn2911.pdf Size:114K _toshiba

RN2913AFS
RN2913AFS

RN2910,RN2911 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2910,RN2911 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1910

Datasheet: RN2910FS , RN2910 , RN2911AFS , RN2911FE , RN2911FS , RN2911 , RN2912AFS , RN2912FS , BC237 , RN2913FS , RN2961CT , RN2961FE , RN2961FS , RN2961 , RN2962CT , RN2962FE , RN2962FS .

 


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