All Transistors. RN2913AFS Datasheet

 

RN2913AFS Datasheet, Equivalent, Cross Reference Search


   Type Designator: RN2913AFS
   SMD Transistor Code: DJ
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 47 kOhm
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.08 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 0.9 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT963 FS6

 RN2913AFS Transistor Equivalent Substitute - Cross-Reference Search

   

RN2913AFS Datasheet (PDF)

 ..1. Size:132K  toshiba
rn2912afs rn2913afs.pdf

RN2913AFS
RN2913AFS

RN2912AFS, RN2913AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2912AFS, RN2913AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorporating a bias

 8.1. Size:117K  toshiba
rn2912fs rn2913fs.pdf

RN2913AFS
RN2913AFS

RN2912FS,RN2913FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2912FS, RN2913FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm1.00.050.80.05 0.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) 0.10.05package. Incorporating a bias resistor into a

 9.1. Size:167K  toshiba
rn2910fe rn2911fe.pdf

RN2913AFS
RN2913AFS

RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reduc

 9.2. Size:117K  toshiba
rn2910fs rn2911fs.pdf

RN2913AFS
RN2913AFS

RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2910FS, RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm1.00.050.80.05 0.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) 0.10.05package. Incorporating a bias resistor into a

 9.3. Size:114K  toshiba
rn2910-rn2911.pdf

RN2913AFS
RN2913AFS

RN2910,RN2911 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2910,RN2911 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1

 9.4. Size:132K  toshiba
rn2910afs rn2911afs.pdf

RN2913AFS
RN2913AFS

RN2910AFS, RN2911AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2910AFS, RN2911AFS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. Incorporating a bias res

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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