RN2961FS Datasheet, Equivalent, Cross Reference Search
Type Designator: RN2961FS
SMD Transistor Code: K0
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.05
W
Maximum Collector-Base Voltage |Vcb|: 20
V
Maximum Collector-Emitter Voltage |Vce|: 20
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.05
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 1.2
pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT963
FS6
RN2961FS Transistor Equivalent Substitute - Cross-Reference Search
RN2961FS Datasheet (PDF)
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RN2961FS~RN2966FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2961FS,RN2962FS,RN2963FS RN2964FS,RN2965FS,RN2966FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 1
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RN2961FE~RN2966FE PNP (PCT) () RN2961FE, RN2962FE, RN2963FE RN2964FE, RN2965FE, RN2966FE : mm (6)
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RN2961CT~RN2966CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2961CT,RN2962CT,RN2963CT RN2964CT,RN2965CT,RN2966CT Switching Applications Unit: mmInverter Circuit Applications 1.00.050.150.03Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a f
rn2961-rn2966.pdf
RN2961~RN2966 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2961,RN2962,RN2963,RN2964,RN2965,RN2966 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing proc
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