2N5766 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5766
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO128
2N5766 Transistor Equivalent Substitute - Cross-Reference Search
2N5766 Datasheet (PDF)
2n5769.pdf
Discrete POWER & SignalTechnologies2N5769C TO-92BENPN Switching TransistorThis device is designed for high speed saturated switchingapplications at currents to 100 mA. Sourced from Process 21.See PN2369A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VV Collector-Base Voltage
2n5758 2n5759 2n5760.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol
2n5758 2n5759 2n5760.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin
Datasheet: 2N575A , 2N576 , 2N5760 , 2N5761 , 2N5762 , 2N5763 , 2N5764 , 2N5765 , BC558 , 2N5767 , 2N5768 , 2N5769 , 2N576A , 2N5770 , 2N5771 , 2N5772 , 2N5773 .
