All Transistors. RN2969FE Datasheet

 

RN2969FE Datasheet and Replacement


   Type Designator: RN2969FE
   SMD Transistor Code: YYJ
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 22 kOhm
   Typical Resistor Ratio R1/R2 = 2.1
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT563 ES6
 

 RN2969FE Substitution

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RN2969FE Datasheet (PDF)

 0.1. Size:219K  toshiba
rn2967fe-rn2969fe.pdf pdf_icon

RN2969FE

RN2967FE~RN2969FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2967FE,RN2968FE,RN2969FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count.

 7.1. Size:127K  toshiba
rn2967fs rn2968fs rn2969fs.pdf pdf_icon

RN2969FE

RN2967FS~RN2969FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2967FS,RN2968FS,RN2969FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 1 6 Incorporating a bias

 8.1. Size:184K  toshiba
rn2967ct rn2969ct.pdf pdf_icon

RN2969FE

RN2967CT~RN2969CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2967CT,RN2968CT,RN2969CT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.05 0.150.03 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. Incorporating a bia

 8.2. Size:133K  toshiba
rn2967-rn2969.pdf pdf_icon

RN2969FE

RN2967~RN2969 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2967,RN2968,RN2969 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary

Datasheet: RN2967CT , RN2967FE , RN2967FS , RN2967 , RN2968CT , RN2968FE , RN2968FS , RN2969CT , BD139 , RN2969FS , RN2969 , RN296PFS , RN2970CT , RN2970FE , RN2970FS , RN2971CT , RN2971FE .

History: 2SB1030 | 2SC4493 | GES2905A | ISB1035AS1 | GFT31-30 | MA1706 | CSC2611

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