RN2971FE Datasheet, Equivalent, Cross Reference Search
Type Designator: RN2971FE
SMD Transistor Code: KJ_YYM
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT563 ES6
RN2971FE Transistor Equivalent Substitute - Cross-Reference Search
RN2971FE Datasheet (PDF)
rn2970fe-rn2971fe.pdf
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RN2970,RN2971 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2970,RN2971 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1
rn2970ct rn2971ct.pdf
RN2970CT,RN2971CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2970CT,RN2971CT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.05 0.150.03 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. Incorporating a bias resistor into a tran
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