All Transistors. 2N576A Datasheet

 

2N576A Datasheet and Replacement


   Type Designator: 2N576A
   Material of Transistor: Ge
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 0.4 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 3 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO5
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2N576A Datasheet (PDF)

 9.1. Size:296K  fairchild semi
 2n5769.pdf pdf_icon

2N576A

Discrete POWER & SignalTechnologies2N5769C TO-92BENPN Switching TransistorThis device is designed for high speed saturated switchingapplications at currents to 100 mA. Sourced from Process 21.See PN2369A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VV Collector-Base Voltage

 9.2. Size:129K  jmnic
 2n5758 2n5759 2n5760.pdf pdf_icon

2N576A

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol

 9.3. Size:118K  inchange semiconductor
 2n5758 2n5759 2n5760.pdf pdf_icon

2N576A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin

Datasheet: 2N5762 , 2N5763 , 2N5764 , 2N5765 , 2N5766 , 2N5767 , 2N5768 , 2N5769 , 2SB817 , 2N5770 , 2N5771 , 2N5772 , 2N5773 , 2N5774 , 2N5775 , 2N5776 , 2N578 .

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