RN29J6CT Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

RN29J6CT Datasheet. Specs and Replacement

Type Designator: RN29J6CT 📄📄

SMD Transistor Code: X6

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 100 kOhm

Built in Bias Resistor R2 = 100 kOhm

Typical Resistor Ratio R1/R2 = 1

Maximum Collector Power Dissipation (Pc): 0.14 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Collector Capacitance (Cc): 1.2 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: CST6

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..1. Size:233K toshiba

RN29J6CT PNP (PCT ) ( ) RN29J6CT mm 1.0 0.05 0.15 0.03 (CST6) 2 ... See More ⇒

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