RN4611 Datasheet. Specs and Replacement
Type Designator: RN4611 📄📄
SMD Transistor Code: VM
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 10 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 120
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RN4611 datasheet
RN4611 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4611 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Includeing two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing proces... See More ⇒
RN4612 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4612 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Includeing two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing proces... See More ⇒
Detailed specifications: RN4603, RN4604, RN4605, RN4606, RN4607, RN4608, RN4609, RN4610, TIP31C, RN4612, RN46A1, RN47A1JE, RN47A1, RN47A2JE, RN47A2, RN47A3JE, RN47A3
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History: ESM5004
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