All Transistors. RN4910 Datasheet

 

RN4910 Datasheet, Equivalent, Cross Reference Search

Type Designator: RN4910

SMD Transistor Code: VK

Material of Transistor: Si

Polarity: NPN*PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT363_SC88_US6

RN4910 Transistor Equivalent Substitute - Cross-Reference Search

 

RN4910 Datasheet (PDF)

1.1. rn4910fe.pdf Size:102K _toshiba

RN4910
RN4910

RN4910FE TOSHIBA Transistor Silicon PNP NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4910FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count en

1.2. rn4910.pdf Size:88K _toshiba

RN4910
RN4910

RN4910 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4910 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications Includeing two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing proce

5.1. rn4911.pdf Size:87K _toshiba

RN4910
RN4910

RN4911 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4911 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications Includeing two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing proce

5.2. rn4911fe.pdf Size:101K _toshiba

RN4910
RN4910

RN4911FE TOSHIBA Transistor Silicon PNPNPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4911FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enab

Datasheet: RN4906 , RN4907FE , RN4907 , RN4908FE , RN4908 , RN4909FE , RN4909 , RN4910FE , TIP2955 , RN4911FE , RN4911 , RN4962FE , RN4981AFS , RN4981FE , RN4981FS , RN4981 , RN4982AFS .

 


RN4910
  RN4910
  RN4910
 

social 

LIST

Last Update

BJT: EMT3FHA | EMT3 | EMT2FHA | EMT2 | EMT1FHA | EMT1DXV6T5G | EMT1DXV6T1G | EMT18 | EML22 | ECH8503-TL-H | ECH8502-TL-H | E13005D-213 | E13005-250 | E13005-225 | DXTN26070CY | DXTD882 | DXT696BK | DXT5616U | DXT2014P5 | DXT2012P5 |