All Transistors. RN4962FE Datasheet

 

RN4962FE Datasheet and Replacement


   Type Designator: RN4962FE
   SMD Transistor Code: 17B
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT563 ES6
 
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RN4962FE Datasheet (PDF)

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RN4962FE

RN4962FE TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN4962FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts co

Datasheet: RN4908FE , RN4908 , RN4909FE , RN4909 , RN4910FE , RN4910 , RN4911FE , RN4911 , 2SD669A , RN4981AFS , RN4981FE , RN4981FS , RN4981 , RN4982AFS , RN4982FE , RN4982FS , RN4982 .

History: 2SC690

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