RN4962FE PDF and Equivalents Search

 

RN4962FE Specs and Replacement

Type Designator: RN4962FE

SMD Transistor Code: 17B

Material of Transistor: Si

Polarity: Pre-Biased-NPN*PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT563 ES6

 RN4962FE Substitution

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RN4962FE datasheet

 ..1. Size:104K  toshiba

 rn4962fe.pdf pdf_icon

RN4962FE

RN4962FE TOSHIBA Transistor Silicon NPN PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN4962FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts co... See More ⇒

Detailed specifications: RN4908FE , RN4908 , RN4909FE , RN4909 , RN4910FE , RN4910 , RN4911FE , RN4911 , D880 , RN4981AFS , RN4981FE , RN4981FS , RN4981 , RN4982AFS , RN4982FE , RN4982FS , RN4982 .

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