2N5774 Datasheet. Specs and Replacement

Type Designator: 2N5774  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 18 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Collector Capacitance (Cc): 14 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO128

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2N5774 datasheet

 9.1. Size:585K  fairchild semi

 2n5771 mmbt5771.pdf pdf_icon

2N5774

2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage... See More ⇒

 9.2. Size:708K  fairchild semi

 2n5771.pdf pdf_icon

2N5774

2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage... See More ⇒

 9.3. Size:28K  fairchild semi

 2n5772.pdf pdf_icon

2N5774

2N5772 NPN Switching Transistor Sourced from process 22. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continued 300 mA TSTG Operating and Storage Junction Temperature Range -... See More ⇒

 9.4. Size:295K  fairchild semi

 2n5770.pdf pdf_icon

2N5774

Discrete POWER & Signal Technologies 2N5770 C TO-92 B E NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 ... See More ⇒

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Detailed specifications: 2N5767, 2N5768, 2N5769, 2N576A, 2N5770, 2N5771, 2N5772, 2N5773, 2SC2655, 2N5775, 2N5776, 2N578, 2N5781, 2N5782, 2N5783, 2N5784, 2N5784SM

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