All Transistors. RN4981FE Datasheet

 

RN4981FE Datasheet, Equivalent, Cross Reference Search


   Type Designator: RN4981FE
   SMD Transistor Code: 6A
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT563 ES6

 RN4981FE Transistor Equivalent Substitute - Cross-Reference Search

   

RN4981FE Datasheet (PDF)

 ..1. Size:103K  toshiba
rn4981fe.pdf

RN4981FE RN4981FE

RN4981FE TOSHIBA Transistor Silicon NPN PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4981FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts

 7.1. Size:123K  toshiba
rn4981fs.pdf

RN4981FE RN4981FE

RN4981FS TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN4981FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications. 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) package. 1 6 Incorporating a bias resistor into a tran

 8.1. Size:148K  toshiba
rn4981afs.pdf

RN4981FE RN4981FE

RN4981AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4981AFS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorporating a bias resistor into

 8.2. Size:254K  toshiba
rn4981.pdf

RN4981FE RN4981FE

RN4981 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) RN4981 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing pro

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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