RN49A4FE Specs and Replacement
Type Designator: RN49A4FE
SMD Transistor Code: 55
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 4.7 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 120
RN49A4FE Substitution
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RN49A4FE datasheet
RN49A4FE TOSHIBA Transistor Silicon PNP NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN49A4FE Switching, Inverter Circuit, Interface Circuit and Driver Unit mm Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the... See More ⇒
RN49A5 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) RN49A5 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count en... See More ⇒
RN49A1FE TOSHIBA Transistor Silicon PNP NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN49A1FE Switching, Inverter Circuit, Interface Circuit and Driver Unit mm Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the... See More ⇒
Detailed specifications: RN4992AFS , RN4992FS , RN4992HFE , RN4993AFS , RN4993FS , RN49A1FE , RN49A1 , RN49A2 , A1015 , RN49A5 , RN49A6FS , RN49J2AFS , RN49J2CT , RN49J2FS , RN49J7FS , RN49P1CT , RN49P1FS .
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