RN49J2CT Specs and Replacement
Type Designator: RN49J2CT
SMD Transistor Code: X1
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.14 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: CST6
RN49J2CT Substitution
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RN49J2CT datasheet
RN49J2CT PNP NPN (PCT ) ( ) RN49J2CT mm 1.0 0.05 0.15 0.03 (CST6) 2 ... See More ⇒
RN49J2FS TOSHIBA Transistor Silicon NPN PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN49J2FS Switching Applications Unit mm Inverter Circuit Applications 1.0 0.05 Interface Circuit Applications 0.8 0.05 0.1 0.05 0.1 0.05 Driver Circuit Applications 1 6 5 2 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 4 ... See More ⇒
RN49J2AFS PNP NPN (PCT ) ( ) RN49J2AFS mm 1.0 0.05 0.8 0.05 0.1 0.05 0.1 0.05 1 6 (6 ) ... See More ⇒
RN49J7FS TOSHIBA Transistor Silicon PNP NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN49J7FS Unit mm Switching Applications 1.0 0.05 Inverter Circuit Applications 0.8 0.05 0.1 0.05 0.1 0.05 Interface Circuit Applications 1 6 Driver Circuit Applications 5 2 Two devices are incorporated into a fine pitch small mold (6-pin) 4 3 packag... See More ⇒
Detailed specifications: RN4993FS, RN49A1FE, RN49A1, RN49A2, RN49A4FE, RN49A5, RN49A6FS, RN49J2AFS, D882, RN49J2FS, RN49J7FS, RN49P1CT, RN49P1FS, 2SA1327A, 2SA1451A, 2SA1452A, 2SA1869
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