RN49J2CT Datasheet, Equivalent, Cross Reference Search
Type Designator: RN49J2CT
SMD Transistor Code: X1
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.14
W
Maximum Collector-Base Voltage |Vcb|: 20
V
Maximum Collector-Emitter Voltage |Vce|: 20
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.05
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 1.2
pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: CST6
RN49J2CT Transistor Equivalent Substitute - Cross-Reference Search
RN49J2CT Datasheet (PDF)
rn49j2fs.pdf
RN49J2FS TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN49J2FS Switching Applications Unit: mmInverter Circuit Applications 1.00.05Interface Circuit Applications 0.80.05 0.10.050.10.05Driver Circuit Applications 1 652 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 4
rn49j2afs.pdf
RN49J2AFS PNP NPN (PCT) () RN49J2AFS : mm 1.00.050.80.05 0.10.050.10.05 1 6 (6)
rn49j7fs.pdf
RN49J7FS TOSHIBA Transistor Silicon PNP NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN49J7FS Unit: mmSwitching Applications 1.00.05Inverter Circuit Applications 0.80.05 0.10.050.10.05Interface Circuit Applications 1 6Driver Circuit Applications 5 2 Two devices are incorporated into a fine pitch small mold (6-pin) 43packag
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N2368AQF
