All Transistors. RN49J2CT Datasheet

 

RN49J2CT Datasheet and Replacement


   Type Designator: RN49J2CT
   SMD Transistor Code: X1
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.14 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: CST6
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RN49J2CT Datasheet (PDF)

 ..1. Size:262K  toshiba
 rn49j2ct.pdf pdf_icon

RN49J2CT

RN49J2CT PNP NPN (PCT) () RN49J2CT : mm 1.00.050.150.03 (CST6)2

 8.1. Size:168K  toshiba
 rn49j2fs.pdf pdf_icon

RN49J2CT

RN49J2FS TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN49J2FS Switching Applications Unit: mmInverter Circuit Applications 1.00.05Interface Circuit Applications 0.80.05 0.10.050.10.05Driver Circuit Applications 1 652 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 4

 8.2. Size:198K  toshiba
 rn49j2afs.pdf pdf_icon

RN49J2CT

RN49J2AFS PNP NPN (PCT) () RN49J2AFS : mm 1.00.050.80.05 0.10.050.10.05 1 6 (6)

 9.1. Size:130K  toshiba
 rn49j7fs.pdf pdf_icon

RN49J2CT

RN49J7FS TOSHIBA Transistor Silicon PNP NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN49J7FS Unit: mmSwitching Applications 1.00.05Inverter Circuit Applications 0.80.05 0.10.050.10.05Interface Circuit Applications 1 6Driver Circuit Applications 5 2 Two devices are incorporated into a fine pitch small mold (6-pin) 43packag

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