RN49P1CT Datasheet, Equivalent, Cross Reference Search
Type Designator: RN49P1CT
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.14
W
Maximum Collector-Base Voltage |Vcb|: 20
V
Maximum Collector-Emitter Voltage |Vce|: 20
V
Maximum Collector Current |Ic max|: 0.05
A
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: CST6
RN49P1CT Transistor Equivalent Substitute - Cross-Reference Search
RN49P1CT Datasheet (PDF)
rn49p1fs.pdf
RN49P1FS TOSHIBA Transistor Silicon NPNPNP Epitaxial Type Preliminary (PCT Process) (Transistor with Built-in Bias Resistor) RN49P1FS Switching, Inverter Circuit, Interface Circuit and Driver Unit: mmCircuit Applications 1.00.050.80.05 0.10.05 0.10.05 Two devices are incorporated into a fine-pitch, Small-Mold (6-pin) package. 1 6 Incorporating a bias
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
