RN49P1CT Specs and Replacement

Type Designator: RN49P1CT

Material of Transistor: Si

Polarity: Pre-Biased-NPN*PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.14 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Collector Current |Ic max|: 0.05 A

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: CST6

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RN49P1CT datasheet

 8.1. Size:148K  toshiba

 rn49p1fs.pdf pdf_icon

RN49P1CT

RN49P1FS TOSHIBA Transistor Silicon NPN PNP Epitaxial Type Preliminary (PCT Process) (Transistor with Built-in Bias Resistor) RN49P1FS Switching, Inverter Circuit, Interface Circuit and Driver Unit mm Circuit Applications 1.0 0.05 0.8 0.05 0.1 0.05 0.1 0.05 Two devices are incorporated into a fine-pitch, Small-Mold (6-pin) package. 1 6 Incorporating a bias ... See More ⇒

Detailed specifications: RN49A2, RN49A4FE, RN49A5, RN49A6FS, RN49J2AFS, RN49J2CT, RN49J2FS, RN49J7FS, 13009, RN49P1FS, 2SA1327A, 2SA1451A, 2SA1452A, 2SA1869, 2SA1887, 2SA1891, 2SA1892

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