2SA1327A Datasheet. Specs and Replacement
Type Designator: 2SA1327A 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 45 MHz
Collector Capacitance (Cc): 400 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220NIS
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2SA1327A datasheet
7.1. Size:202K jmnic
2sa1327.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1327 DESCRIPTION With TO-220Fa package Low collector saturation voltage High current capacity APPLICATIONS Strobe flash applications Audio power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT ... See More ⇒
7.2. Size:218K inchange semiconductor
2sa1327.pdf
isc Silicon PNP Power Transistor 2SA1327 DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max.)@I = -8A CE(sat) C High DC Current Gain- hFE= 70(Min.)@ I = -8A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Strobe flash applications. Audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
8.1. Size:130K toshiba
2sa1329.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.3. Size:128K toshiba
2sa1328.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.4. Size:287K toshiba
2sa1320.pdf
2SA1320 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1320 High Voltage Switching Applications Unit mm Color TV Chroma Output Applications High voltage VCEO = -250 V Low C 1.8 pF (max) re Complementary to 2SC3333 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -250 V Collector-emi... See More ⇒
8.5. Size:48K panasonic
2sa1323 e.pdf
Transistor 2SA1323 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC3314 4.0 0.2 Features Allowing supply with the radial taping. High transition frequency fT. Optimum for high-density mounting. Absolute Maximum Ratings (Ta=25 C) marking 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitte... See More ⇒
8.6. Size:44K panasonic
2sa1323.pdf
Transistor 2SA1323 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC3314 4.0 0.2 Features Allowing supply with the radial taping. High transition frequency fT. Optimum for high-density mounting. Absolute Maximum Ratings (Ta=25 C) marking 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitte... See More ⇒
8.7. Size:209K jmnic
2sa1329.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1329 DESCRIPTION With TO-220 package Complement to type 2SC3346 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas... See More ⇒
8.8. Size:208K jmnic
2sa1328.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1328 DESCRIPTION With TO-220 package Complement to type 2SC3345 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas... See More ⇒
8.9. Size:216K inchange semiconductor
2sa1329.pdf
isc Silicon PNP Power Transistor 2SA1329 DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -6A CE(sat) C High Switching Speed Complement to Type 2SC3346 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒
8.10. Size:215K inchange semiconductor
2sa1328.pdf
isc Silicon PNP Power Transistor 2SA1328 DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -6A CE(sat) C High Switching Speed Complement to Type 2SC3345 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒
Detailed specifications: RN49A5, RN49A6FS, RN49J2AFS, RN49J2CT, RN49J2FS, RN49J7FS, RN49P1CT, RN49P1FS, 13003, 2SA1451A, 2SA1452A, 2SA1869, 2SA1887, 2SA1891, 2SA1892, 2SA1905, 2SA1923
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