2SA1925 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2SA1925
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.3 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 35 MHz
   Collector Capacitance (Cc): 18 pF
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: TPS

2SA1925 Transistor Equivalent Substitute - Cross-Reference Search

2SA1925 Datasheet (PDF)

..1. Size:198K toshiba
2sa1925.pdf

8.1. Size:198K toshiba
2sa1924.pdf

8.2. Size:194K toshiba
2sa1923.pdf

2SA1923 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1923 High Voltage Switching Applications Unit: mm High voltage: VCEO = -400 V Low saturation voltage: V = -1 V (max) CE (sat)(I = -100 mA, I = -10 mA) C BMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -400 VCollector-emitter voltage VCEO -400 VEmitter-b

8.3. Size:116K toshiba
2sa1926.pdf